sot23 n-channel enhancement mode vertical dmos fet issue 3 C march 1996 j partmarking detail C ss absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 50 v continuous drain current at t amb =25c i d 200 ma pulsed drain current i dm 800 ma gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 360 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. min. max. unit conditions. drain-source breakdown voltage bv dss 50 v i d =0.25ma, v gs =0v gate-source threshold voltage v gs(th) 0.5 1.5 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 0.5 5 100 m a m a na v ds =50v, v gs =0 v ds =50v, v gs =0v, t=125c (2) v ds =20v, v gs =0 static drain-source on-state resistance (1) r ds(on) 3.5 w v gs =5v,i d =200ma forward transconductance(1)(2) g fs 120 ms v ds =25v,i d =200ma input capacitance (2) c iss 50 pf v ds =25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 25 pf reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 10 ns v dd ? 30v, i d =280ma rise time (2)(3) t r 10 ns turn-off delay time (2)(3) t d(off) 15 ns fall time (2)(3) t f 25 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator BSS138 d g s sot23 3 - 72
0 0.8 1.2 1.6 t-temperature ( c) normalised r ds(on) and v gs(th) 0 r ds(on) at v gs(th) at 1.0 1.0 10 0.1 i d -drain current (amperes) r ds(on) - drain source on resistance (ohms) 0.01 100 i d -drain current (amperes) 0 100 200 300 400 500 g fs -forward transconductance (ms) 0 0.2 0.4 0.6 0.8 1.0 0 2 4 0 100 200 300 400 500 g fs -forward transconductance (ms) v gs -gate source voltage (volts) 1 10 100 0.1 100 v ds -drain source voltage (volts) c-capacitance (pf) note:-v gs =0v c iss c oss c rss typical on resistance vs. drain current 6810 012345 0 0.2 0.4 0.6 0.8 1.0 v ds -drain source voltage (volts) i ds -drain source current (a) saturation characteristics typical transco nductance vs. drain current typical transco nductance vs. gate - source voltage typical capacitance vs. drain - source voltage normalised r ds(on) and v gs(th) vs. temperature v gs =10v 5v 4.5v 4v 3.5v 3v 2.5v 2v 3v 3.5v 5v 4v 7v 10v v gs =2.5v v ds =25v 80 m s pulsed test v ds =25v 80 m s pulsed test c iss c oss c rss v gs =5v 0.6 1.0 1.4 1.8 -40 40 80 120 160 1 10 80 m s pulsed test f=1mhz i d =200ma i d =1ma v ds =v gs typical characteristics 0 0 2 4 6 8 10 12 14 q-charge (nc) v gs -gate-source voltage (volts) v dd =20v 012345 0 0.2 0.4 0.6 0.8 1.0 100 m a 1ma 10ma 100ma 1a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i ds - drain source current v sd - source drain voltage (v) v gs - gate source voltage (v) i ds - drain source current (a) typical diode forward voltage typical transfer characteristics typical gate charge vs. gate-source voltage 30v 50v i d =200ma 80 m s pulsed test v ds =10v 80 m s pulsed test v gs =0 0.2 0.4 0.6 0.8 1.0 1.2 typical characteristics BSS138 BSS138 3 - 73 3 - 74
0 0.8 1.2 1.6 t-temperature ( c) normalised r ds(on) and v gs(th) 0 r ds(on) at v gs(th) at 1.0 1.0 10 0.1 i d -drain current (amperes) r ds(on) - drain source on resistance (ohms) 0.01 100 i d -drain current (amperes) 0 100 200 300 400 500 g fs -forward transconductance (ms) 0 0.2 0.4 0.6 0.8 1.0 0 2 4 0 100 200 300 400 500 g fs -forward transconductance (ms) v gs -gate source voltage (volts) 1 10 100 0.1 100 v ds -drain source voltage (volts) c-capacitance (pf) note:-v gs =0v c iss c oss c rss typical on resistance vs. drain current 6810 012345 0 0.2 0.4 0.6 0.8 1.0 v ds -drain source voltage (volts) i ds -drain source current (a) saturation characteristics typical transco nductance vs. drain current typical transco nductance vs. gate - source voltage typical capacitance vs. drain - source voltage normalised r ds(on) and v gs(th) vs. temperature v gs =10v 5v 4.5v 4v 3.5v 3v 2.5v 2v 3v 3.5v 5v 4v 7v 10v v gs =2.5v v ds =25v 80 m s pulsed test v ds =25v 80 m s pulsed test c iss c oss c rss v gs =5v 0.6 1.0 1.4 1.8 -40 40 80 120 160 1 10 80 m s pulsed test f=1mhz i d =200ma i d =1ma v ds =v gs typical characteristics 0 0 2 4 6 8 10 12 14 q-charge (nc) v gs -gate-source voltage (volts) v dd =20v 012345 0 0.2 0.4 0.6 0.8 1.0 100 m a 1ma 10ma 100ma 1a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i ds - drain source current v sd - source drain voltage (v) v gs - gate source voltage (v) i ds - drain source current (a) typical diode forward voltage typical transfer characteristics typical gate charge vs. gate-source voltage 30v 50v i d =200ma 80 m s pulsed test v ds =10v 80 m s pulsed test v gs =0 0.2 0.4 0.6 0.8 1.0 1.2 typical characteristics BSS138 BSS138 3 - 73 3 - 74
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